Power Device Probes
Cascade Microtech's power device probes provide a complete on-wafer solution for over-temperature, low-contact resistance measurements of power seimconductors up to 60A and 3000V.
High Current Parametric (HCP) Probe
Designed specifically for testing power devices on wafer, the High Current Parametric Probe reduces probe and device destruction at high currents by minimizing contact resistance at the wafer-to-probe interface to prevent device heating at the tip. The innovative multi-finger design distributes the ...
High Voltage Parametric (HVP) Probe
Cascade Microtech’s High Voltage Parametric Probe provides the capability to make coaxial measurements up to 3000V and triaxial measurements up to 1100V while preserving a low-noise measurement path. The HVP probe is engineered with proprietary insulation materials that prevent against dielectric br ...
