DC/CV Parameter Extraction for Semiconductor Device Modeling

Scaling of advanced CMOS devices as low as 32 nanometers relies on precision low current and low capacitance measurement capability. To fully characterize device behavior, wafer temperature control from -55ºC to 300ºC is essential.  Cascade Microtech's probe stations enable precision measurements below 1fA by reducing noise and leakage significantly. The AttoGuard further enhances measurement performance for both thermal and ambient characterization and can be configured as an extended shield ground for CV or triaxial guard for IV measurements. In addition, Cascade Microtech offers a full range of electrically optimized thermal systems along with it's on-wafer measurement systems.

ProblemsSolutions
EMI perturbs the measurement dataMicroChamber shields the measurement area
Measurement of ultra-low capacitanceAttoGuard reduces residual capacitance
Wafer temperature control Electrically optimized thermal systems
Measurement of ultra low leakageLow-current accessories and wafer chuck

Related Web Pages
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DC Probes
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Related Files
Low-Level DC Parametric Measurements for Process Device Characterization
Advanced Solutions for On-Wafer MOS CV
Improved CV and IV Thermal Measurement Capabilities Using the Patented AttoGuard
Summit DC/CV Parametric Probing Systems: 6- and 8-inch Analytical Wafer Probe Stations
Wafer Probing Solutions for Process Qualification - WLR